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| Preliminary Datasheet 2A DDR TERMINATION REGULATOR General Description The AP2302L linear regulator is designed to meet the JEDEC specification SSTL-2 and SSTL-18 for termination of DDR-SDRAM. The regulator can sink or source up to 2A current continuously, providing enough current for most DDR applications. VOUT is designed to track the VREF voltage within a 20mV tolerance over the entire current range while preventing shooting through on the output stage. On-chip thermal limiting provides protection against a combination of high current and ambient temperature which would create an excessive junction temperature. The AP2302L, used in conjunction with series termination resistors, provides an excellent voltage source for active termination schemes of high speed transmission lines as those seen in high speed memory buses and distributed backplane designs. The AP2302L is available in SOIC-8 and TO-252-5 packages. AP2302L Features * * * * * Support Both DDR I (1.25VTT) and DDR II (0.9VTT) Requirements Source and Sink Current up to 2A High Accuracy Output Voltage at Full-load Adjustable VOUT by External Resistors Shutdown for Standby or Suspend Mode Operation with High-impedance Output Applications * * * DDR-SDRAM Termination DDR-II Termination SSTL-2 Termination SOIC-8 TO-252-5 Figure 1. Package Types of AP2302L Nov. 2005 Rev. 1. 1 1 BCD Semiconductor Manufacturing Limited Preliminary Datasheet 2A DDR TERMINATION REGULATOR Pin Configuration AP2302L M Package (SOIC-8) VIN GND REFEN VOUT 1 2 3 4 8 7 6 5 VCNTL VCNTL VCNTL VCNTL D Package (TO-252-5) 5 4 3 2 1 VOUT REFEN VCNTL (TAB) GND VIN Figure 2. Pin Configuration of AP2302L (Top View) Pin Description Pin Number Pin Name SOIC-8 1 2 3 4 5, 6, 7, 8 TO-252-5 1 2 4 5 3 VIN GND REFEN VOUT VCNTL Power Input. Ground. Reference Voltage Input and Chip Enable. Output Voltage. Supply Voltage for Internal Circuit (Internally Connected for SOIC-8), (TAB for TO-252-5). Function Nov. 2005 Rev. 1. 1 2 BCD Semiconductor Manufacturing Limited Preliminary Datasheet 2A DDR TERMINATION REGULATOR Functional Block Diagram VCNTL(TAB) 5,6,7,8 (3) AP2302L VIN 1 (1) CURRENT LIMIT BANDGAP A(B) A for SOIC-8 B for TO-252-5 OUTPUT CONTROL REFEN 3 (4) 4 (5) VOUT START UP THERMAL PROTECT 2 (2) GND Figure 3. Functional Block Diagram of AP2302L Ordering Information AP2302L Circuit Type Package M: SOIC-8 D: TO-252-5 E1: Lead Free Blank: Tin Lead TR: Tape and Reel Blank: Tube Package Temperature Range Part Number Tin Lead Lead Free AP2302LM-E1 Marking ID Tin Lead Lead Free 2302LM-E1 2302LM-E1 AP2302LD-E1 AP2302LD-E1 Packing Type Tube Tape Reel SOIC-8 0 to 125oC AP2302LMTR-E1 AP2302LD-E1 Tube Tape Reel TO-252-5 0 to 125oC AP2302LDTR-E1 BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Nov. 2005 Rev. 1. 1 3 BCD Semiconductor Manufacturing Limited Preliminary Datasheet 2A DDR TERMINATION REGULATOR Absolute Maximum Ratings (Note 1) Parameter Supply Voltage for Internal Circuit Power Dissipation ESD (Human Body Model) Storage Temperature Range Lead Temperature (Soldering, 5sec) Symbol VCNTL PD ESD TSTG TLEAD JC SOIC-8 TO-252-5 Value 7 Internally Limited 2 -65 to 150 260 28 oC/W AP2302L Unit V W KV o C oC Package Thermal Resistance (Free Air) 13 Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Supply Voltage for Internal Circuit DDR I Power Input DDR II Junction Temperature Note 2: Keep VCNTL TJ VIN in operation power on and power off sequences. 0 VIN 1.6 1.8 125 o Symbol VCNTL (Note 2, 3) Min Typ 3.3 2.5 Max 6 VCNTL Unit V V C Note 3: For safe operation, VCNTL MUST be tied to 3.3V rather than 5V. Nov. 2005 Rev. 1. 1 4 BCD Semiconductor Manufacturing Limited Preliminary Datasheet 2A DDR TERMINATION REGULATOR Electrical Characteristics (TA=25oC, VIN=2.5V, VCNTL=3.3V, VREFEN=1.25V, COUT=10F (Ceramic), unless otherwise specified.) Parameter Output Offset Voltage DDR I Load Regulation DDR II Quiescent Current of VCNTL Leakage Current in Shutdown Mode Protection Current Limit Thermal Shutdown Temperature Thermal Shutdown Hysteresis Shutdown Function Shutdown Threshold Trigger Output=High Output=Low Note 4: VOS is the voltage measurement defined as VOUT subtracted from VREFEN. 0.8 0.2 V ILIMIT TSHDN 3.3V VCNTL 5V 2.6 150 50 A oC oC AP2302L Symbol VOS Conditions L=0 (Note 4) IL=0 to 2A IL=0 to -2A IL=0 to 2A IL=0 to -2A Min -20 -20 Typ 0 0 Max 20 20 Unit mV VOUT mV -20 0 3 3 20 5 6 mA IQ ISHDN No Load VREFEN<0.2V, RL=180 A Nov. 2005 Rev. 1. 1 5 BCD Semiconductor Manufacturing Limited Preliminary Datasheet 2A DDR TERMINATION REGULATOR Typical Performance Characteristics AP2302L 6 6 Sourcing Current (A) Sinking Current (A) 4 4 VCNTL=3.3V VIN=2.5V VOUT=1.25V 2 -40 VCNTL=3.3V VIN=2.5V VOUT=1.25V 2 -40 -20 0 20 40 60 o 80 100 120 -20 0 20 40 60 80 o 100 120 Ambient Temperature ( C) Ambient Temperature ( C) Figure 4. Sourcing Current vs. Ambient Temperature Figure 5. Sinking Current vs. Ambient Temperature 650 650 Threshold Voltage (mV) 600 Threshold Voltage (mV) 600 550 550 VCNTL=3.3V 500 VCNTL=5.0V 500 VIN=2.5V VIN=2.5V -40 -20 0 20 40 60 o 80 100 120 -40 -20 0 20 40 60 o 80 100 120 Ambient Temperature ( C) Ambient Temperature ( C) Figure 6. Threshold Voltage vs. Ambient Temperature Figure 7. Threshold Voltage vs. Ambient Temperature Nov. 2005 Rev. 1. 1 6 BCD Semiconductor Manufacturing Limited Preliminary Datasheet 2A DDR TERMINATION REGULATOR Typical Performance Characteristics (Continued) AP2302L Output Transient Voltage Output Transient Voltage Output Current Time (s) 20mV 20mV -20mV -20mV Output Current 2A 2A -2A -2A Time (s) Figure 8. 0.9VTT at 2A Transient Response Figure 9. 1.25VTT at 2A Transient Response 0.30 0.30 VIN=0.9V 0.28 0.26 VIN=0.9V VIN=0.85V VIN=0.8V VIN=0.85V VIN=0.8V RDS(ON) ( ) 0.28 0.26 0.24 0.22 0.20 RDS(ON) () 0.24 0.22 0.20 0.18 0.16 25 50 75 o VCNTL=3.3V VREFEN=1.0V 100 125 0.18 0.16 25 50 75 o VCNTL=5V VREFEN=1.0V 100 125 Ambient Temperature ( C) Ambient Temperature ( C) Figure 10. RDS(on) vs. Ambient Temperature Figure 11. RDS(on) vs. Ambient Temperature Nov. 2005 Rev. 1. 1 7 BCD Semiconductor Manufacturing Limited Preliminary Datasheet 2A DDR TERMINATION REGULATOR Typical Performance Characteristics (Continued) AP2302L 350 TA=25 C TA=50 C o o o 350 TA=25 C TA=50 C TA=65 C o o o 300 TA=65 C 300 Copper Area (mm ) 2 Copper Area (mm ) 2 250 250 200 200 150 150 100 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 100 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 Power Dissipation (W) Power Dissipation (W) Figure 12. Copper Area vs. Power Dissipation (For SOIC-8) Figure 13. Copper Area vs. Power Dissipation (For TO-252-5) Nov. 2005 Rev. 1. 1 8 BCD Semiconductor Manufacturing Limited Preliminary Datasheet 2A DDR TERMINATION REGULATOR Typical Application VCNTL = 3.3V AP2302L VIN = 2.5V CCNTL R1 VIN REFEN VCNTL AP2302L GND R2 CSS COUT RDUMMY VOUT CIN RTT EN Figure 14. Typical Application of AP2302L R1 = R2 = 100K, RTT = 50 / 33 / 25 RDUMMY = 1K, as for VOUT discharge when VIN is not present but VCNTL is present CSS = 1F, CIN = 470F, CCNTL = 47F, COUT =470F Nov. 2005 Rev. 1. 1 9 BCD Semiconductor Manufacturing Limited Preliminary Datasheet 2A DDR TERMINATION REGULATOR Mechanical Dimensions SOIC-8 Unit: mm(inch) AP2302L 4.800(0.189) 5.000(0.197) 7 1.350(0.053) 1.750(0.069) 0.320(0.013) 8 7 8 0.675(0.027) 0.725(0.029) D 5.800(0.228) 6.200(0.244) D 20:1 1.270(0.050) TYP 0.100(0.004) 0.300(0.012) R0.150(0.006) 0.800(0.031) 0.200(0.008) 1.000(0.039) 3.800(0.150) 4.000(0.157) 0 8 0.330(0.013) 0.510(0.020) 0.900(0.035) 1 5 R0.150(0.006) 0.190(0.007) 0.250(0.010) Nov. 2005 Rev. 1. 1 10 BCD Semiconductor Manufacturing Limited Preliminary Datasheet 2A DDR TERMINATION REGULATOR Mechanical Dimensions (Continued) TO-252-5 Unit: mm(inch) AP2302L 6.350(0.250) 6.650(0.262) 5.200(0.205) 5.400(0.213) 0.430(0.017) 0.580(0.023) 2.200(0.087) 2.400(0.094) 9.500(0.374) 9.900(0.390) 5.400(0.213) 5.700(0.224) 0.000(0.000) 0.127(0.005) 2.550(0.100) 2.900(0.114) 0.430(0.017) 0.580(0.023) 1.400(0.055) 1.780(0.070) 3.800(0.150) REF 1.270(0.050) TYP 2.540(0.100) TYP 0.400(0.016) 0.600(0.024) Nov. 2005 Rev. 1. 1 11 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 BCD Semiconductor Manufacturing Limited - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 27B, Tower C, 2070, Middle Shen Nan Road, Shenzhen 518031, China Tel: +86-755-8368 3987, Fax: +86-755-8368 3166 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808, Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 3170 De La Cruz Blvd., Suite 105, Santa Clara, CA 95054-2411, U.S.A Tel: +1-408-988 6388, Fax: +1-408-988 6386 |
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